Identification of Defects in Semiconductors - download pdf or read online

By Michael Stavola (Eds.)

Given that its inception in 1966, the sequence of numbered volumes referred to as Semiconductors and Semimetals has special itself in the course of the cautious choice of famous authors, editors, and contributors.The"Willardson and Beer"Series, because it is celebrated, has succeeded in publishing a number of landmark volumes and chapters. not just did lots of those volumes make an influence on the time in their ebook, yet they remain well-cited years after their unique unencumber. lately, Professor Eicke R. Weber of the collage of California at Berkeley joined as a co-editor of the sequence. Professor Weber, a well known professional within the box of semiconductor fabrics, will additional give a contribution to carrying on with the sequence' culture of publishing well timed, hugely appropriate, and long-impacting volumes. a few of the contemporary volumes, comparable to Hydrogen in Semiconductors, Imperfections in III/V fabrics, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise certainly that this custom may be maintained or even expanded.Reflecting the actually interdisciplinary nature of the sector that the sequence covers, the volumes in Semiconductors and Semimetals were and should stay of significant curiosity to physicists, chemists, fabrics scientists, and equipment engineers in glossy undefined.

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Rec. B 30, 4564. van Wezep. D. A. and Arnerlaan, C. A. J. (1988). Phys. Reo. €3 37, 7628. van Wyk, J. A.. Tucker. 0. , Newton. M. , Baker. J. , Woods, G. , and Spear, P. (1995). P h p . Rev. B 52, 12657. 1 EPR AND ENDOR STUDIES OF DEFECTS IN SEMICONDUCTORS 43 Vlasenko, L. , Son, N. , van Oosten, A. , Ammerlaan, C. A. , Lebedev, A. A,, Taptygov, E. , and Khramtsov, V. A. (1990). Solid State Commun. 73, 393. Watkins, G. D. and Corbett, J. W. (1961). Phys. Rev. 121, 1001. Watkins, G. D. (1963). J .

1972). Phys. Rev. B 5, 3988. Ammerlaan, C. A. , and van Wezep, D. A. (1985). Microscopic IdentGcation of Electronic Defects in Semiconductors, edited by N. M. Johnson, S. G. Bishop, and G. D. Watkins. MRS Vol. 46, Pittsburgh, p. 227. Baldwin, J. , Jr. (1963). Phys. Rev. Lett. 10, 220. Baraff, G. , Kane, E. , and Schliiter, M. (1980). Phys. Rev. B 21, 5662. Baranowski, J. (1986). Deep Centers in Semiconductors, edited by S. T. Pantelides, Gordon and Breach, New York, Chapter 10. Barnes, R. G. and Smith, W.

B) Angular dependence of the spectrum, the dashed lines arising from the specific defect orientation depicted in (a). 35 eV. the four silicon neighbors surrounding the vacancy. The pairing by twos shown in the figure is detected in the D,, symmetry of the g-tensor as well as in slight tilting of the 29Si hyperfine tensor axes. 35 eV. Such light, in this p-type material, produces only free holes. This is consistent with the charge stage identification, the neutral vacancy trapping a hole to become V + .

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