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An advantage in the use of the novel reactive and thermally stable precursors is the purity of films obtained under optimised ALD reaction conditions and the fact that ozone is not needed but water is sufficiently reactive to oxidize the precursor into the oxide on the substrate surface. For some rare earths, poor thermal stability of carbon- and nitrogen-coordinated precursors may restrict their use. ALD produces REO thin films and structures based thereon which have good electrical characteristics and interfaces.

The as-deposited films were found to have high silicon and hydrogen impurity contents due to decomposition of the precursor. The calculated effective permittivity was around 15. Gadolinium oxide films grown by ALD from Gd[N(SiMe3 )2 ]3 and H2 O have been recently described by Jones et al. [28, 29]. Films were deposited by the ALD method between 150 ◦ C and 300 ◦C, but the growth rate was found to significantly increase with pulse length at all temperatures, indicating that the growth was not self-limiting.

Roh: Influence of oxidant source on the property of atomic layer deposited Al2 O3 on hydrogen-terminated Si substrate, Thin Solid Films 476, 252 (2005) 20 [38] J. Niinist¨ o, M. Putkonen, L. Niinist¨ o, K. Kukli, M. Ritala, M. Leskel¨ a: Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor, J. Appl. Phys. 95, 84 (2004) 20 [39] H. B. Park, M. Cho, J. Park, S. W. Lee, C. S. -P. -H. -I. -K. -C. -J. Oh: Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2 O or O3 as the oxidant, J.

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