Download e-book for iPad: Simulation of Semiconductor Devices and Processes: Vol.5 by M. E. Law (auth.), Univ.-Prof. Dipl.-Ing. Dr. Siegfried

By M. E. Law (auth.), Univ.-Prof. Dipl.-Ing. Dr. Siegfried Selberherr, Dipl.-Ing. Hannes Stippel, Dipl.-Ing. Ernst Strasser (eds.)

The "Fifth overseas convention on Simulation of Semiconductor units and techniques" (SISDEP ninety three) maintains a chain of meetings which used to be initiated in 1984 by means of okay. Board and D. R. J. Owen on the college university of Wales, Swansea, the place it came about a moment time in 1986. Its association used to be succeeded via G. Baccarani and M. Rudan on the college of Bologna in 1988, and W. Fichtner and D. Aemmer on the Federal Institute of expertise in Zurich in 1991. This yr the convention is held on the Technical college of Vienna, Austria, September 7 - nine, 1993. This convention shall offer a world discussion board for the presentation of out­ status study and improvement leads to the realm of numerical technique and de­ vice simulation. The miniaturization of latest semiconductor units, the use of new fabrics and complex strategy steps within the improvement of recent semiconduc­ tor applied sciences indicates the layout of latest laptop courses. This development in the direction of extra complicated constructions and more and more subtle approaches calls for complex simulators, corresponding to absolutely 3-dimensional instruments for nearly arbitrarily complex geometries. With the expanding desire for higher types and more advantageous comprehend­ ing of actual results, the convention on Simulation of Semiconductor units and techniques brings jointly the simulation neighborhood and the method- and gadget en­ gineers who desire trustworthy numerical simulation instruments for characterization, prediction, and development.

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5 (1989). [23] M. Grupen and K. Hess, unpublished. SIMULATION OF SEMICONDUCTOR DEVICES AND PROCESSES Vol. 5 17 Edited by S. Selberherr, H. Stippel, E. Strasser - September 1993 About Boltzmann Equations for Transport Modeling in Semiconductors F. A. Dieudonne, URA 168 du CNRS Universite de Nice Parc Valrose, F-06108 Nice Cedex, FRANCE Abstract We present some results on the mathematical analysis of kinetic equations for modelling transport processes in semiconductors. We focus our attention on the connection between the kinetic models and the fluids ones based on driftdiffusion or hydrodynamic equations.

Mauser, F. Poupaud, A Wigner Function Approach to (Semi)classical Limits: Electrons in a Periodic Potential, submitted to J. of Math. Phys. [11] F. Poupaud, A. Yamnahakki, Conditions limites du second ordre pour l'equation de derive diffusion des semiconducteurs, Internal Report 330 (1993), Lab. A. Dieudonne, Univ. de Nice. SIMULATION OF SEMICONDUCTOR DEVICES AND PROCESSES Vol. 5 21 Edited by S. Selberherr, H. Stippel, E. Strasser - September 1993 Applied TCAD in Mega-Bits Memory Design H. Masuda, H.

By switching at run-time between directories with the files containing the default values for the tools, the simulator behavior may be modified without affecting user settings. g. a series of process simulation steps working on a common wafer, or an iteration loop which performs the same sequence of calculations on a set of initial geometries which might be automatically generated from a prototype geometry description, and the like. The task control module is the only one interacting directly with the user.

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