By Jef Poortmans, Vladimir Arkhipov
Thin-film sunlight cells are both rising or approximately to emerge from the examine laboratory to turn into commercially to be had units discovering functional quite a few functions. at present no textbook outlining the elemental theoretical heritage, tools of fabrication and purposes at present exist. therefore, this publication goals to give for the 1st time an in-depth review of this subject overlaying a large variety of thin-film sunlight mobilephone applied sciences together with either natural and inorganic fabrics, provided in a scientific style, through the clinical leaders within the respective domain names. It covers a huge variety of comparable subject matters, from actual rules to layout, fabrication, characterization, and functions of novel photovoltaic units.
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Additional info for Thin Film Solar Cells: Fabrication, Characterization and Applications
Sample text
In Chapter 7 the second type of polycrystalline compound solar cell material, CuInSe2 , is reviewed. In Chapter 8 one is dealing with the fundamental difference between inorganic and organic materials with respect to free carrier generation. This chapter deals with the theoretical insights in exciton generation and dissociation. These insights provide the necessary base for understanding the device concepts in Chapters 9 and 10. In these chapters one is dealing with active layers where the typical domain size is in the nm range as encountered in fully organic bulk donor–acceptor heterojunction solar cell or hybrid approaches like the ‘Graetzel cell’.
One of the important items when using Si1−x Gex -alloys is the surface passivation. Although the use of plasma enhanced chemical vapor deposition (PECVD)-nitride passivates the front surface to some degree, the blue response of the cell is significantly lower than for a Si reference cell. The blue response is improved by the use of a Si capping layer on top of the structure. The positioning of the Si– Si1−x Gex transition relative to the junction is very important to avoid excessive recombination near the interface between the Si capping layer in which the emitter is diffused and the Si1−x Gex base layer.
8b, showing the cross-section of an epitaxial layer grown on a mechanically textured surface. One can clearly observe the modified texture after epitaxial growth. On grains with orientations near (100) the texture is well preserved, whereas on other grain orientations the original texture has been modified by the development of different facets. By means of this technique, large-area CVD-grown epitaxial cells (100 cm2 ) on UMG-Si were realized. Using an industrial solar cell process with screenprinted contacts, efficiencies between 12 and 13 % were obtained despite the limited thickness of the epitaxial layer which was between 15 and 20 μm [21, 49].
